IMT Solar Irradiance Sensor
Irradiance Sensor (Si Series)
•Silicon irradiance sensors (Si sensor) show a cost-effective, but rugged
and reliable solution for the measurement of solar irradiance, especially
for the monitoring of Photovoltaic (PV) systems.
•Based on the construction of the sensor element corresponding to a PV module they are ideal as reference for the monitoring of PV systems.
•Especially the spectral response comparable to PV modules as well as the similar inclination error (incident angle modifier) allow an exact analysis of PV energy yields using Si sensor data.!
•Silicon irradiance sensors (Si sensor) show a cost-effective, but rugged
and reliable solution for the measurement of solar irradiance, especially
for the monitoring of Photovoltaic (PV) systems.
•Based on the construction of the sensor element corresponding to a PV module they are ideal as reference for the monitoring of PV systems.
•Especially the spectral response comparable to PV modules as well as the similar inclination error (incident angle modifier) allow an exact analysis of PV energy yields using Si sensor data.!
Advantages
• Built completely as a solar module, therefore extremely good comparability to energy yields and system performance of PV systems, temperature compensation for higher accuracy
• The optional cell temperature is a very good alternative to directly measured module temperature and leads to a higher accuracy in yield forecasting.
• Built completely as a solar module, therefore extremely good comparability to energy yields and system performance of PV systems, temperature compensation for higher accuracy
• The optional cell temperature is a very good alternative to directly measured module temperature and leads to a higher accuracy in yield forecasting.
| General Data | |
|---|---|
| Solar cell | Monocrystalline silicon(50 mm x 33 mm) |
| Measurement | Possible up to 1500 W/m2 (depending on sensor type) |
| Working temperature | –35°C to 80°C |
| Electrical connection | Via 3m cable, uv and weatherproof |
| Case, protection mode | Powder-coated aluminum, IP 65 |
| Measurement uncertainty | ±5 W/m2 ± 2.5 % of reading valid for temperature compensation, spectrum AM 1.5 and vertical light beam |
| Type | Signal Irradiance | Signal cell Temperature |
|---|---|---|
| Si-V-1.5TC-batt
Si-V-1.5TC-batt |
0 to 1.5 V for
0 to 1500 W/m² |
./. |
| Si-V-1.5TC Si-V-1.5TC |
0 to 1.5 V for
0 to 1500 W/m² |
./. |
| Si-V-1.5TC-T Si-V-1.5TC-T |
0 to 1.5 V for
0 to 1500 W/m² |
0 to 2 V for
-40 to +90°C |
| Si-mV-85
Si-mV-85 |
approx. 85 mV for
1,500 W/m2 |
./. |
| Si-mV-85-Pt100(-4L)
Si-mV-85-Pt100(-4L) |
approx. 85 mV for
1500 W/m² |
Pt100 |
| Si-mV-85-Pt1000(-4L)
Si-mV-85-Pt1000(-4L) |
ca. 60 mV for
1000 W/m² |
Pt1000 |
| Si-V-10TC
Si-V-10TC |
0 to 10 V for
0 to 1500 W/m² |
./. |
| Si-V-10TC-T
Si-V-10TC-T |
0 to 10 V for
0 to 1500 W/m² |
0 to 10 V for
-40 to +90°C |
| Si-I-420TC
Si-I-420TC |
4 to 20 mA for
0 to 1500 W/m² |
./. |
| Si-I-420TC-T
Si-I-420TC-T |
4 to 20 mA for
0 to 1500 W/m² |
4 to 20 mA for
-40 to +90°C |
| Si-RS485TC-T | M&T, MODBUS, 0 to 1,500 W/m2 | -40 to +90°C |
| Si-RS485TC-2T | M&T, MODBUS, 0 to 1,500 W/m2 | -40 to +90°C |